Study of the Effect of Exciton Annihilation Lifetime on Some Kinematic and Intrinsic Parameters of a Silicon Heterojunction Solar Cell (HIT), Illuminated by Monochromatic Light

In this article, with a view to improving the efficiency of photovoltaic cells, and given the promising yields of silicon heterojunction photovoltaic cells, we have, using a silicon heterojunction cell (a-Si:H/c-Si) doped with (n+p) , studied the contribution of excitons to the internal quantum efficiency of charge carriers.

We then developed a detailed explanation of the energy conversion phenomena, based on an exciton-exciton annihilation process, which allows the electrons of quasiparticles to retain some of their energy. We used a numerical method for solving the charge carrier transport equations and carried out some additional calculations, which enabled us to obtain some results.

These results then enabled us to study the influence of the annihilation lifetime on the charge carrier photo-current density, leading to internal charge carrier quantum yields of between 29.29768% and 77.8525%.